| 摘要 |
<p>PURPOSE:To prevent a malfunction at a data reading time by causing a ratio between the shape of a first MOS transistor of a first serial circuit and the shape of the first MOS transistor of a second serial circuit to be almost equal with a ratio between the shape of the second MOS transistor of the first serial circuit and the shape of a second MOS transistor of the second serial circuit. CONSTITUTION:The ratio between the shape of the first MOST72 of the first serial circuit 50-2 and the shape of a first MOST61 of the second serial circuit 50-1 is caused to be almost equal with the ratio between the shape of the second MOST74 of the first serial circuit 50-2 and the shape of the second MOST63 of the second serial circuit 50-1. Accordingly, in a detecting current to be inputted to the second electrode of the first MOST72 of the first serial circuit 50-2 and in a reference current to be inputted to the second electrode of the first MOST63 of the second serial circuit 50-1, since the reference current of the same value as the detecting current can be inputted, a circuit exclusively used for generating the reference current goes to be unnecessary. Further, even when a power source voltage is fluctuated, the reference current can be followed to the fluctuation of the detecting current. Thus, the malfunction at the data reading time can be prevented.</p> |
