发明名称 |
Thin film deposition process. |
摘要 |
<p>A thin film deposition process comprises the steps of providing a first target area on a magnetron electrode, sputtering particles from said area so that they fall onto a heated substrate body for forming the required deposit, simultaneously operating a sputtering gun such that further particles are dislodged from a second target area and directed towards the substrate, the two resulting particle plasmas mixing at the substrate surface such that a deposit of a predetermined chemical composition is produced. This allows a multicomponent material such as a PLZT ceramic to be deposited without a change in composition due to different volatilities etc. of the components.</p> |
申请公布号 |
EP0302684(A2) |
申请公布日期 |
1989.02.08 |
申请号 |
EP19880307070 |
申请日期 |
1988.08.01 |
申请人 |
PLESSEY OVERSEAS LIMITED |
发明人 |
WORT, CHRISTOPHER JOHN;DOREY, LYNN YVETTE |
分类号 |
H01L21/203;C23C14/34;C23C14/35;C23C14/36 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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