| 摘要 |
<p>A semiconductor laser device comprises a substrate (11, 21, 41) and a multi-layered crystal structure (12-17, 22-29, 31-33, 42-45, 51-53) with an active layer (13, 24, 43, 52) for laser-oscillating operation, the multi-layered crystal structure (12-17, 22-29, 31-33, 42-45, 51-53) being disposed on the substrate (11, 21, 41) and having a striped channel area (100, 200, 202) through which current is supplied to the active layer (13, 24, 43, 52) and a light-absorbing area positioned outside of the channeled area (100, 200, 202, 400) by which a difference between the amount of light to be absorbed inside of the channeled area (100, 200, 202, 400) and the amount of light to be absorbed outside of the channeled area (100, 200, 202, 400) is created, which causes a difference in the effective refractive index of the active layer (13, 24, 43, 52), resulting in an optical waveguide in the active layer (13, 24, 43, 52), wherein the active layer (13, 24, 43, 52) is flat and uniform and the width (W2) of the portion of the channel area (100, 200, 202, 400) in the vicinity of at least one facet is wider than the width (W1) of the remaining portion of the channel area (100, 200, 202, 400).</p> |
