Detector of ionizing particles.

摘要

The invention relates to diode-type semiconductor detectors. A wide doped p<+> zone (3), connected to a first electrode (7) forms, with the weakly doped n<-> substrate (1), a first diode which, whilst operating, is reverse-biased. Other diodes are constructed on the other surface of the substrate and are forward-biased. These diodes are formed by an extended n-type zone (15) and by a plurality of p<+> zones (11) connected to the electrodes (8). The detector is applicable in nuclear physics. <IMAGE>