发明名称 PATTERN FORMING METHOD
摘要 PURPOSE:To eliminate the need for alignment mark for negative mask except a division pattern for a negative mask by adapting a part of the division pattern of the negative mask to an alignment mark for composition and transferring the division pattern to a plate to be transferred. CONSTITUTION:The negative masks 18-21 where the division patterns 3-6 are respectively formed by dividing a desirable pattern into plural pieces and the mask 22 for an alignment where the alignment marks for composition 8, 10, 12 and 14 are formed are formed and then the plate to be transferred 30 providing the alignment mark for composition is formed. And resist is applied on the plate to be transferred providing the alignment mark for composition and some parts 3a-6a of the division patterns of the negative masks 18-21 are adapted to the alignment mark for composition. After transferring the division pattern by exposing them one by one through the negative mask, the plate to be transferred 30 providing the alignment mark for composition is developed and etched, from which plate the resist is exfoliated so as to form the desirable pattern. Thus, the alignment mark is not necessitated for the negative mask except the division pattern.
申请公布号 JPS6437561(A) 申请公布日期 1989.02.08
申请号 JP19870193507 申请日期 1987.07.31
申请人 HOYA CORP 发明人 UENO KUNIHIKO
分类号 H01L21/30;G03F1/00;H01L21/027;H01L21/68 主分类号 H01L21/30
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