| 摘要 |
<p>PURPOSE:To execute a reading at a high speed by constituting a word line driving circuit of, at least, a logic circuit, a driving circuit, a delay circuit, a capacitor for a boost and an MOS transistor. CONSTITUTION:At the time of a data reading operating, when a logic circuit 60 outputs, for example, an H level signal, the driving ability of the H level signal is increased by driving circuits 70 and 80 and after that, the signal is charged to a first electrode of a capacitor 100. After the output signal of the logic circuit 60 or the output signal of the driving circuits 70 and 80 goes to be the H level, a delay circuit 90 causes the second electrode of the capacitor 100 to be the H level after a constant time passes. Thus, the output signal of the driving circuits 70 and 80 are boosted higher than a power source voltage Vcc and since MOS transistors 111 and 112 go to be an on-condition by the boosted voltage, the word line, which is selected by a second signal, is highly speedily driven through these MOS transistors 111 and 112 to the power source voltage. Thus the reading can be executed.</p> |
