| 摘要 |
PURPOSE:To improve the breakdown withstanding voltage of an output transistor by a method wherein in a MOSFET the drain of which is connected to an external connecting terminal, the distance between the drain contact and the source contact is made equal to the distance between the drain contact and the substrate contact which is close to the drain contact. CONSTITUTION:It is designed so that the distance d1 between a drain contact 9 and a substrate contact 8 is equal to the distance d2 between the drain contact 9 and a source contact 10. Accordingly, even if a high voltage due to static electricity or the like is applied to the drain of an insulated gate field-effect transistor (MOSFET), the current due to discharge of electric charges is uniformly distributed to two paths, thereby making the breakdown voltage very high. Since the voltage causing electrostatic breakdown is a very high voltage, the distance d1 may be a little larger than the distance d2. |
