发明名称 Coated mask for photolithographic construction of electric circuits
摘要 A mask for deposition of electrically-conductive paste material on a ceramic base, in the construction of electric circuits having multiple electronic chips is formed of molybdenum with a titanium nitride coating. The coating passes through apertures of a mesh on one side of the mask and continues through the apertures to appear in cutouts of stencils along the opposite side of the mask. Other elements of the fourth group of the periodic table, such as zirconium, may be employed in lieu of the titanium in the formation of the coating. The coating is uniformly applied by a sputtering procedure in which nitrogen is sprayed uniformly along the mask and away from a titanium target. In an argon plasma, the nitrogen and the titanium are sputtered onto the molybdenum where the titanium and nitrogen combine to form the coating.
申请公布号 US4803110(A) 申请公布日期 1989.02.07
申请号 US19860907268 申请日期 1986.09.15
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 AHN, KIE Y.;BASAVAIAH, SARYADEVARA;BRODSKY, STEPHEN B.;CORTELLINO, CHARLES A.;LEVINE, JOSEPH E.
分类号 B41C1/14;B41N1/24;H01L21/48;H05K3/12;(IPC1-7):B32B3/10;B05D3/06;G03F9/00 主分类号 B41C1/14
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