发明名称 PLASMA TREATMENT DEVICE
摘要 PURPOSE:To efficiently treat a substrate by introducing reactive gas into a reaction space inside a vacuum vessel wherein the intensive magnetic field generating means is provided around it, exciting the reactive gas and generating plasma having high density and high energy. CONSTITUTION:An intensive magnetic field is generated by arranging both a ring-shaped electromagnet 5 and a permanent magnet 6 parallel to a reaction chamber 1 to the outside of a vacuum vessel which has a evacuated reaction space 1 provided with a preliminary chamber 8 in the inside thereof. The substrate 2 is held on a holder 3 combined with a heater in this reaction chamber 1 and heated at the prescribed temp. The inside of the reaction chamber 1 is evacuated via an exhausting system 9 and reactive gas contg. acetylene, etc., is introduced via a gas introducing system 11. Then microwaves are introduced through a waveguide 7 from a microwave oscillator 4. Thereby the reactive gas is excited and decomposed by generating plasma having high density and high energy in the reaction chamber 1 and thereby a film having high crystallinity and excellent quality such as diamond is formed on the substrate 2 with good reproducibility.
申请公布号 JPS6436769(A) 申请公布日期 1989.02.07
申请号 JP19880103093 申请日期 1988.04.26
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIROSE NAOKI;INUSHIMA TAKASHI;TAKAYAMA TORU
分类号 H01L21/205;C23C16/26;C23C16/27;C23C16/34;C23C16/42;C23C16/50;C23C16/511;C23F4/00;H01J37/32;H01L21/302;H01L21/3065 主分类号 H01L21/205
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