| 发明名称 |
Semiconductor integrated circuit formed on an insulator substrate |
| 摘要 |
A semiconductor integrated circuit formed on an insulator substrate and comprising a drive transistor and a load transistor, in which a threshold voltage of the load transistor is set in the range of -2.8V to -1.0V so as to ensure stable operation without temperature dependency with respect to working speed and power consumption of the circuit.
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| 申请公布号 |
US4803530(A) |
申请公布日期 |
1989.02.07 |
| 申请号 |
US19860830868 |
申请日期 |
1986.02.19 |
| 申请人 |
TAGUCHI, SHINJI;TANGO, HIROYUKI |
发明人 |
TAGUCHI, SHINJI;TANGO, HIROYUKI |
| 分类号 |
H01L21/8236;H01L27/088;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
H01L21/8236 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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