| 摘要 |
PURPOSE:To prevent a parasitic thyristor effect and to improve reliability in the writing of information and to make a cell formable in high density, by providing a metallic electrode so that a thin insulation film is interposed between a barrier metal and this electrode and next by breaking the thin insulation film to short-circuit the metallic electrode and the barrier metal. CONSTITUTION:An interlayer insulation film 7 is formed on a barrier metal 6, and this film 7 is opened to expose said barrier metal 6. Each memory cell is composed of the barrier metal 6 in contact with a P<+> base region 5, an insulation film 8, and a metallic electrode 9. An N<+> type buried layer 2 and the metallic electrode 9 are composed as word lines and digit lines in each line of memory cells. A voltage of a prescribed value or above is applied between the N<+> type buried layer 2 and the metallic electrode 9 in this cell composition, that is, between the P<+> type base region 5 and the metallic electrode 9, so that the insulation film 8 is broken to short-circuit the barrier metal 6 and the metallic electrode 9 and to write information. |
