| 摘要 |
PURPOSE:To obtain a structure having strong resistivity to misalignment when forming a gate electrode by forming in the gate electrode a hook-shaped projecting part toward the field insulating region. CONSTITUTION:In order that the gate length of a gate electrode 13 on a field insulating region 9 and on part of an element formation region 10 extending from the field insulating region 9 in the direction of the gate width becomes larger than the gate length of the gate electrode 13 on the other part of the element formation region 10, the gate electrode 13 is formed so that it provided with a hook-shaped projecting part 16 onto the field insulating region 9. With this, if misalignment occurs, the gate length in a parasitic MOS transistor never becomes short enough to produce punch through, thereby obtaining a semiconductor device having strong resistivity to misalignment. |
