| 摘要 |
PURPOSE:To enhance a junction between an element electrode surface and a bonding wire in terms of its reliability at high temperatures by a method wherein the rate of the quantity of bromine to that of antimony oxide is specified in an epoxy resin molding material and tetra-substituted borate of quaternary phosphonium is used as a hardening accelerator. CONSTITUTION:In a semiconductor device sealed in an epoxy resin molding material composed of a flame retardant, consisting of an epoxy resin bromide and antimony oxide, and 60-85wt.% of inorganic granular filling agent, the quantity of bromine is kept not higher than 0.5wt.% and antimony oxide not lower than 2.0wt.%, and tetra-substituted borate of quarternary phosphonium is used as a hardening accelerator. In such a device, the leadframe-gold wire- element junction is highly reliable even after a prolonged exposure to a high temperature, realizing a resin-sealed semiconductor device excellent in resistance to heat. |
