发明名称 |
Method for manufacturing pressure contact semiconductor devices |
摘要 |
A semiconductor device includes a support member; a semiconductor element mounted on the support member; an elastic body which places the semiconductor element in pressure-contact with the support member; a cylindrical body for containing the semiconductor element and the elastic body, the lower end of the cylindrical body being fixed to the support member; and a plurality of curved projections produced so as to be in contact with the upper end of the elastic body by curving at least three points of the top end of the cylindrical body while pressure is applied to the semiconductor element through the elastic body.
|
申请公布号 |
US4803180(A) |
申请公布日期 |
1989.02.07 |
申请号 |
US19870056990 |
申请日期 |
1987.06.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OHDATE, MITSUO |
分类号 |
H01L21/52;H01L21/58;H01L23/049;H01L23/48;H01L25/11;(IPC1-7):B01J17/00;H01L23/04;H01L23/10 |
主分类号 |
H01L21/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|