发明名称 LIGHT EMITTING DIODE MADE OF III/V COMPOUND SEMICONDUCTOR MATERIAL
摘要 PURPOSE: To improve the external quantization efficiency by selecting a substance composition of a surface layer so as to extend its band gap, thereby extending a P-region while penetrating through the surface layer and avoiding a loss due to surface recombination. CONSTITUTION: A thin surface layer 1 is placed on a layer 2 containing the same mixed crystal, and the material composition of a surface layer 1 is selected so as to expand the band gap in comparison with the band gap of the coated material and a P-region 5 is extended while penetrating through the surface layer 1. The P-channel conduction region 5 is manufactured by diffusing zinc and is introduced through the surface layer 1 into a GaAs0.6 P0.4 layer 2. In this case, the thickness (x) of the P-layer in existence in the layer 2 is about 1.2μm and the entire thickness (a) of the player P is selected to be about 1.3μm. Thus, a loss by the surface recombination is avoided and the external quantization efficiency is improved.
申请公布号 JPS6435970(A) 申请公布日期 1989.02.07
申请号 JP19880162716 申请日期 1988.07.01
申请人 TELEFUNKEN ELECTRONIC GMBH 发明人 BUERUNAA SHIYAIRAA
分类号 H01L33/00;H01L33/30 主分类号 H01L33/00
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