| 摘要 |
PURPOSE:To patterning the transparent conductive film on the incident light side without using a resist by dipping and patterning only a first transparent conductive film in an etchant. CONSTITUTION:After depositing first an ITO (first transparent conductive film) 2 on a glass substrate 1 to a thickness of 2000Angstrom , a SnO2 (second transparent conductive film) 3 is deposited to a thickness of 200Angstrom . Then, using a knife edge (metal piece) of carbon steel as a scriber, the whole of the thickness of the deposited SnO2 film 3 and part of the thickness of the ITO film 2 are scribed off (4) with a predetermined pattern. Then, this is dipped in a strong hydrochrolic acid to remove the ITO film 2 left in the parts 4 of removal by the above scribing. Thereafter, an amorphous silicon (pi, n layer) 5 and an electrode 6 on the transmitted light side are formed in the respective predetermined patterns. |
