| 摘要 |
<p>PURPOSE:To manufacture a semiconductor device having a high insulating effect and a high passivating effect by a method wherein a wirebonding temperature is set to be lower than a growth temperature of an inorganic insulating film and outgasing due to a bonding treatment is prevented in order to prevent the insulating film from being swollen or exfoliated. CONSTITUTION:An organic resin film is etched by using a mixed gas of CF4+O2 by making use of titanium as a mask; a second-layer aluminum film 4 is sputtered on the film; a pad 4 is formed at one part of the film. In addition, a silicon nitride film 5 is formed on it inside a plasma reaction furnace at 320 deg.C; it is patterned. For an assembling operation, a wire 6 is heated at 200 deg.C and is bonded to the aluminum pad 4. Accordingly, because a temperature during a bonding operation is lower than a growth temperature of the silicon nitride film 5 as a passivating film, outgasing from an organic insulating film is not caused during a bonding operation; it is possible to prevent a defect such as swelling, pushing-up or the like from being caused in the passivating film.</p> |
