发明名称 FORMATION OF CUBIC BORON NITRIDE FILM
摘要 PURPOSE:To efficiently form a cubic boron nitride film having high purity and superior hardness, by impressing a high-frequency voltage on the excited atoms of boron and nitrogen to produce discharge plasma and simultaneously radiating thermions. CONSTITUTION:An electron beam is applied to a boron-containing evaporation source 2 in a reaction chamber 1 from an electron gun 3 via forcusing coils 4, by which boron is evaporated and excited. On the other hand, while supplying nitrogen gas via a nitrogen gas-containing gas-introducing nozzle 5, decomposition and excitation is carried out by means of D.C. discharge. A substrate 7 is fixed to an RF electrode 9 in which a heater 8 is buried, and high-frequency waves are impressed on boron atoms and nitrogen atoms reaching near to the surface of the substrate 7 to produce discharge plasma. Simultaneously, A thermion radiator 10 provided to the vicinity of the substrate 7 surface is heated to radiate thermions. By this method, the film of cubic boron nitride can be formed onto the surface of the substrate 7. This film has superior wear resistance.
申请公布号 JPS6436759(A) 申请公布日期 1989.02.07
申请号 JP19870192248 申请日期 1987.07.31
申请人 SUMITOMO ELECTRIC IND LTD 发明人 FUKUSHIMA KAZUHIKO;TOBIOKA MASAAKI
分类号 C23C14/06;C23C14/24;C23C14/32 主分类号 C23C14/06
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