| 摘要 |
PURPOSE:To obtain a semiconductor device capable of relaxing a stress of an aluminum wiring layer and capable of preventing its disconnection by installing the following: a wiring layer formed on a semiconductor substrate via an insulating film and composed mainly of aluminum; a high-polymer organic film formed on an upper face of this wiring layer and having a radical whose water absorptivity is little. CONSTITUTION:An aluminum wiring part 13 is formed on a semiconductor substrate 11 via a silicon oxide film 12 formed by thermal oxidation or the like; an organic film 14 is formed on the wiring part. As a material for this organic film, polyphenylene sulphide (PPS) is used. Then, if the aluminum film is sintered while it is heated, the deposited organic film is transformed into an organic film 14' whose difference in height is reduced because the organic film is fluid at a high temperature. Because PPS is a thermoplastic highpolymer compound having a chain polymerized structure, its thermal resistance is good and its molecules do not have a polarity, it has a property of low water absorptivity. In succession, a silicon nitride film 15 is deposited on the organic film 14' by a plasma CVD operation. Because the organic film whose water absorptivity is low and which is heat-resistant comes into contact with the aluminum wiring layer, it is possible to reduce a stress to the aluminum wiring part. |
