| 摘要 |
PURPOSE:To obtain a small-sized light source applying a semiconductor laser, by integrating, on a substrate, a light emitting element and a light beam converting element to convert the beam shape of a light radiated from said light emitting element. CONSTITUTION:A light emitting element 2 and a light beam converting element 5 to converter the beam shape of a light radiated from the light emitting element 2 are integrated on a substrate 1. For example, on a single crystal substrate 1 such as GaAs and InP, a semiconductor laser 2 is formed by using a III-V compound semiconductor such as GaAs/AlGaAs system, InP/InGaAsP system, and InGaP/AlGaInO system. Further, on the single crystal substrate 1, a light beam converting element 5 constituted by using II-VI compound semiconductor such as ZnS, ZnSe, and ZnTe is formed. In the inside of the light beam converting element 5, a refractive index distribution having light converging property in the z-axis direction in figure, i.g. the thickness direction of the light beam converting element 5, is formed. |
