发明名称 THIN FILM TRANSISTOR
摘要 <p>PURPOSE:To obtain a good display characteristic even during photoirradiation by providing multi-layered films formed with 1st and 2nd light transmittable insulating films, the resonance wavelengths of both of which are the wavelength of the luminous rays of a mercury lamp, on the main plane of an working semiconductor layer. CONSTITUTION:The working semiconductor layer 1 has a gate insulating film 6 and a gate electrode 5 formed via the gate insulting film on one main plane of said layer. The multi-layered films 4 laminated with >=1 layers of both the 1st light transmittable insulating films 2 and the 2nd light transmittable insulating films 3 constituted in such a manner that the resonance wavelengths thereof are 436nm wavelength of the luminous rays of the mercury lamp are provided on the other main plane of the working semiconductor layer 1 in the position opposite to the gate electrode 5. Photocurrent at the time of off is thereby decrease by >=1 digits and the good display characteristic is obtd. even during the photoirradiation.</p>
申请公布号 JPS6433531(A) 申请公布日期 1989.02.03
申请号 JP19870190646 申请日期 1987.07.29
申请人 FUJITSU LTD 发明人 MATSUMOTO TOMOTAKA;KAWAI SATORU;NASU YASUHIRO
分类号 G09F9/35;G02F1/133;G02F1/136;G02F1/1368;H01L21/027;H01L21/30;H01L27/12;H01L29/78;H01L29/786 主分类号 G09F9/35
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