| 摘要 |
PURPOSE:To eliminate the need for a spacer made of SiO2, etc., and to enable a lift-off by forming a pattern to a photo-resist film, deforming the form of the fringe of the pattern to a shape suitable for the lift-off through heat treatment, forming a coating to be lifted off on the pattern and dissolving the coating. CONSTITUTION:The photo-resist film 22 is formed onto a semiconductor substrate 21, an opening 22A is bored through patterning, the angular section of the opening 22A is softened through an ion milling by Ar gas, and the angular section is changed into a swelled shape. The whole surface containing the opening is coated with a metallic film 23 made of Al/Au/Ge, etc., the films 23 of the surface and in the opening 22A are interrupted, and an electrode 23A is formed in the opening 22A. The films 23 and 22 are removed, and the electrode 23A is left on the substrate 21. Accordingly, the form of the opening 22A of the film 22 is changed into a shape suitable for the lift-off, and the film 23 can be lifted off only by a photo-resist. |
