| 摘要 |
PURPOSE:To deposit a III-V or II-VI compound semiconductor layer characterized by less lattice defects and high quality on a silicon wafer, by implanting oxygen ions in a silicon single crystal substrate, annealing the substrate, and forming an embedded silicon dioxide layer in the inside of a part beneath the surface of the substrate. CONSTITUTION:A compound semiconductor for forming a functional device is crystallized and grown on the surface of a silicon single crystal substrate 1, and a semiconductor device is manufactured. At this time, oxygen ions are implanted (a) in the silicon single crystal substrate 1 by an ion implanting method. The substrate is annealed, and an embedded silicon dioxide layer 2 is formed in the inside beneath the surface of the silicon single crystal substrate 1. A compound semiconductor is transformed into polycrystalline silicon from single crystal silicon 5 in the direction of the depth from the surface of the silicon single crystal substrate 1. A transition region 3 for terminating misfit transfer at the time of the crystal growth of said compound semiconductor is formed. Thereafter, a III-V compound semiconductor layer 6 or a II-VI compound semiconductor Iayer is deposited on the surface of a said silicon substrate.
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