| 摘要 |
PURPOSE:To reduce the area of a cell without separately forming a region for shaping a high resistor by forming both an anode and a cathode for a schottky barrier diode SBD onto an SBD diffusion layer, on the cathode side of which an N-type impurity is diffused, and shaping the high resistor into said diffusion layer. CONSTITUTION:A schottky barrier diode SBD is formed by bringing an anode electrode 1 and a low-concentration diffusion layer 3 into contact. The anode electrode 1, a cathode electrode 2 and high-concentration diffusion layers 4 are brought into ohmic-contact, and a high resistor VHR is shaped between the electrode 1 and the electrode 2 by the low-concentration diffusion layer 3. Consequently, the SBD and the VHR are formed in parallel connection between the electrode 1 and the electrode 2. Accordingly, a region for shaping the high resistor VHR need not be shaped separately, thus reducing the area of a memory cell. |
