发明名称 High density sintered silicon carbide - mix of silicon carbide carbon and boron sintered in carbon contg. atmos.
摘要 <p>A sintered SiC body is produced from a mixt. of SiC, a boron containing material (0.3-10%B) and a carbonaceous material (1-15%C) which is formed into a green body and sintered in a C containing reducing atmosphere such as a hydnocarbon (less than 30 vol.% methane). The SiC powder preferably has a surface area of 3-14 m2/g and the sintering temp. is pref. below 2200 deg.C. Used for high temp. structural applicns. High density SiC is produced by sintering.</p>
申请公布号 DE3023425(C2) 申请公布日期 1989.02.02
申请号 DE19803023425 申请日期 1980.06.23
申请人 UNITED KINGDOM ATOMIC ENERGY AUTHORITY, LONDON, GB 发明人 DENTON, IVOR EDISON, CHILDREY, WANTAGE, OXON, GB;HENNEY, JOHN WILLIAM, ABINGDON, OXON, GB
分类号 C04B35/565 主分类号 C04B35/565
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