High density sintered silicon carbide - mix of silicon carbide carbon and boron sintered in carbon contg. atmos.
摘要
<p>A sintered SiC body is produced from a mixt. of SiC, a boron containing material (0.3-10%B) and a carbonaceous material (1-15%C) which is formed into a green body and sintered in a C containing reducing atmosphere such as a hydnocarbon (less than 30 vol.% methane). The SiC powder preferably has a surface area of 3-14 m2/g and the sintering temp. is pref. below 2200 deg.C. Used for high temp. structural applicns. High density SiC is produced by sintering.</p>
申请公布号
DE3023425(C2)
申请公布日期
1989.02.02
申请号
DE19803023425
申请日期
1980.06.23
申请人
UNITED KINGDOM ATOMIC ENERGY AUTHORITY, LONDON, GB