发明名称 GASEOUS PHASE SYNTHESIS FOR DIAMOND
摘要 PURPOSE:To synthesize a diamond of high film-formation rate, sufficient film- thickness and superior film-property by quenching through colliding a cold substrate with the thermo-plasma jet of a gas containing hydrogen and carbon compd. CONSTITUTION:By applying a DC current between an anode 1 and a cathode 2 under the flow of a gas containing a hydrogen 3 and a carbon compd. gas 4, and a discharging arc furnace 5, the said gas is rapidly heated to form a thermoplasma of >=10,000 deg.C at around a nozzle 6. Owing to the vol. expansion due to a rapid temp. increase, the said plasma spouts, as an supersonic plasma jet, from a nozzle 6 into a chamber 7 under reduced pressure. The plasma jet is collided efficiently on to the cooled substrate 10, and quenched to react on to the substrate prior to the disappearance of a short-life hydrogen atom and others, and a diamond film 11 is synthesized thereby. Owing to a powerful ultraviolet ray radiated by the arc discharge, the kinetic energy due to a photoactivation and a collision of supersonic particles is further participated in the reaction on to the substrate.
申请公布号 JPS6433096(A) 申请公布日期 1989.02.02
申请号 JP19870220437 申请日期 1987.09.04
申请人 FUJITSU LTD 发明人 KURIHARA KAZUAKI;SASAKI KENICHI;KAWARADA MOTONOBU;ETSUNO NAGAAKI
分类号 C01B31/06;C23C16/26;C23C16/27;C23C16/50;C30B29/04;H01L21/205 主分类号 C01B31/06
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