| 摘要 |
PURPOSE:To speed up erasing by adding Sb to Ge-Te and specifying the atomic number ratios of Ge, Te and Sb so as to exist within the range enclosed with specific points thereby forming a recording film on an optical information recording medium. CONSTITUTION:Ge, Te and Sb are respectively deposited by vacuum deposition, sputtering, etc., on a glass substrate 2 to form the recording layer 3 consisting of the compsn. within the range enclosed with the lines connecting the points A, B, C, D, and E of the figure. A protective layer 4 consisting of SiO2, AlN, Si3N4, etc., is further deposited thereon. The concn. of Te in the information recording medium is confined to <=50at.% and Sb is added as a 3rd element to said medium. Both the Sb lattice and the GeTe lattice have rhombohedron structure and can be substd. and, therefore, a solid soln. is formed and since the phase sepn. to Te, Sb2Te3 and GeTe, etc., is obviated, the crystallization rate is increased. The erasing is thereby speeded up. |
