| 摘要 |
PURPOSE:To improve the characteristic values of the open ended voltage of a photoelectric converter, short-circuit photocurrents, etc., by forming and interposing a first substantially intrinsic thin-film between a first conductive thin-film and a second substantially intrinsic thin-film by the plasma decomposition of a silane compound. CONSTITUTION:A first conductive thin-film consisting of a P-type amorphous silicon group thin-film, a first thinner substantially intrinsic thin-film composed of amorphous silicon shaped by the plasma decomposition of a silane compound shown in general formula SinH2n+2 on said thin-film, a second thicker conductive thin-film made up of N-type amorphous silicon by the plasma decomposition of the mixed gas of the silane compound and phosphine PH3 on said first substantially intrinsic thin-film, and a second electrode are formed onto a first electrode in succession, thus manufacturing a photoelectric converter. |
