| 摘要 |
PURPOSE:To form a hydrogenated amorphous C-Si film which is high in mechanical strength and excellent in insulation properties, etc., by separately impressing high-frequency electric power and microwave electric power respectively to gas contg. silicon atom and gas contg. carbon atom and making them to plasma. CONSTITUTION:A gaseous material consisting of gas contg. silicon atom, gas contg. carbon atom and hydrogen is made to plasma in an evacuated vacuum vessel 1 and an a-SiC:H film is formed on a lamellate base body 100A heated at about 350 deg.C by the decomposed and produced active seeds. In the film forming method, two kinds of plasma decomposition chambers 13, 14 are arranged to make the gaseous material to plasma. Both gas contg. carbon atom such as CH4 difficult to be decomposed and gaseous H2 are introduced into the plasma decompositon chamber 13 and impressed with microwave electric power. The gas contg. silicon atom such as Si2H6 which is chemically more active is introduced into the other plasma decomposition chamber 14 and impressed with high-frequency electric power. Thereby respective gaseous materials are decomposed respectively in the optimum conditions and the superior-quality a-SiC:H film can be formed. |
