| 摘要 |
PURPOSE:To transform a nonsuperconducting material to a superconducting material, to improve characteristics of a superconductor having low superconductivity, and to enable prepn. of a superconducting coil or circuit, etc., without working the coil or the circuit, etc. CONSTITUTION:An oxygen concn. at a position of a crystal lattice of an oxide is enriched or reduced by irradiating a nonconducting oxide or a conducting oxide (e.g. perovskite compound oxide) with corpuscular beam (e.g. O ion or H ion) or electromagnetic radiation. By the method, a nonsuperconductor is partially transformed to a superconductor, or a superconductor is transformed partially to a nonsuperconductor. By the application of this method, an insulator 71 is formed by, for example, forming an oxide superconductor 70 by sputtering an insulating film 60 of a semiconductor element 50, masking then a part for distributing wiring, and executing ion-doping selectively. A semiconductor device having a multilayered wiring is obtd. by the repetition of this method. |
