发明名称 METHOD OF INTERCONNECTING ACTIVE REGIONS AND/OR GATES OF C-MOS INTEGRATED CIRCUITS
摘要 A method for interconnecting the active zones and/or gates of CMOS integrated circuits. The method comprises, during the formation of the gates in a first conductive coating, defining in the latter the dimensions of the connections to be produced, and wherein following the formation of the active zones, the gates are laterally insulated and then a second conductive coating producing the desired connections is deposited on the complete circuit, with the exception of the lateral insulation.
申请公布号 DE3567126(D1) 申请公布日期 1989.02.02
申请号 DE19853567126 申请日期 1985.03.25
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 HARTMANN, JOEL;JEUCH, PIERRE
分类号 H01L21/768;H01L21/8238;H01L27/092;H01L29/417;H01L29/78;(IPC1-7):H01L21/90;H01L23/52 主分类号 H01L21/768
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