发明名称 |
FIELD EFFECT TRANSISTOR READ ONLY MEMORY |
摘要 |
A resistor personalized memory cell consisting of a resistive gate field effect transistor. One end of the gate electrode is connected to the memory cell access line, the other end to one of its source or drain regions. The source or drain region not connected to the gate electrode is connected to the memory cell bit line. Memory cell personalization is accomplished by selecting the resistance of the resistive gate. Memory cell data is read by detecting the current flow through the cell, the magnitude of the current flow being proportional to the gate resistance. |
申请公布号 |
DE3475845(D1) |
申请公布日期 |
1989.02.02 |
申请号 |
DE19843475845 |
申请日期 |
1984.08.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERTIN, CLAUDE LOUIS;KOTECHA, HARISH NARANDAS |
分类号 |
G11C16/04;G11C11/56;G11C17/12;(IPC1-7):G11C17/00 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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