| 摘要 |
PURPOSE:To realize high performance by a method wherein a modified layer in the surface or in the side wall of a 1st metal oxide superconducting layer is utilized as an effective junction layer and a 2nd metal oxide superconducting thin film is formed and brought into contact with the modified layer. CONSTITUTION:After a Y-Ba-Cu-O thin film 2 is formed on a sapphire substrate 1, oxygen ions, Ar ions or Xe ions are applied in a vacuum to form a surface modified layer 3. Then a Y-Ba-Cu-O thin film 4 is formed under the same conditions as forming the Y-Ba-Cu-O superconducting thin film. At that time, the Y-Ba-Cu-O thin film 4 is formed by solid-state growth on the insulating film to form a sandwich structure of Y-Ba-Cu-O/insulating film/Y-Ba-Cu-O. Successively, after an insulating film 5 is formed in an oxygen atmosphere, the respective films are selectively etched to the depth deeper than the modified layer. Then metal electrodes 6 are formed in the etched parts 30 and the insulating film 5 on the Y-Ba-Cu-O thin film 4 is selectively removed and a metal electrode 7 is formed. With this constitution, a superconducting device made of a superconductor with a high quality surface and advantageous to high integration and with a high controllability and high performance can be obtained. |
