| 摘要 |
PURPOSE:To obtain a silicon thin film transistor having a high carrier mobility and capable of controlling a threshold voltage to a low value by discharging in inert gas added with hydrogen gas of specific molar % to generate ions, colliding them to the surface of a target to deposit discharged silicon atoms on a substrate, and annealing it for a specific length of time. CONSTITUTION:One or more of inert gases, such as helium, neon, argon, xenon, krypton and the like are mixed, and 1-50mol% of hydrogen gas is further mixed as sputtering gas. When a negative DC voltage or high frequency voltage is applied to an electrode 22, a glow discharge is generated to generate ions from the inert atmospheric gas to collide with the surface of a target 23 made of silicon. As a result, the silicon atoms are expelled out from the target 23 to form a silicon thin film on an insulating substrate 26. Then, the silicon thin film is annealed for a short time, such as 10 sec or less of heating time by a light radiating method of a laser to form a polycrystalline state. |
