| 摘要 |
PURPOSE:To make it possible to grow up a superconductive membrane with no crack by growing up a compound of GaN or AlN on a saphier substrate as a buffer layer. CONSTITUTION:On a siphier C axis substrate 1, GaN crystals 3 are grown up in a gaseous phase breeding in which NH3 and H2 are reacted with Ga metal. Then, on the resultant substrate 1, a superconductive material layer 2 is formed in a beam vacuum evaporation method. In this case, the GaN breeding layer 3 grows as single crystals on the substrate 1, and it has extremely numerous empty grid points of N, being flexible to a grid distortion. Consequently, when a superconductor layer is formed thereover, no crack is produced, and a stable superconductive membrane is obtained even through an annealing and cooling processes are applied. |
