| 摘要 |
PURPOSE:To improve the crystallinity of an obtained thin film and to form the film of high quality inexpensively by processing with ultrasonic wave material solution to reduce the particle size of atomized fine particles. CONSTITUTION:Material solution is aqueous solution or alcohol solution of compound containing an element of a CuInSe2 thin film. These solutions 51, 52 and 53 are processed with ultrasonic wave in vessels 41, 42 and 43, respectively to form atomized particles of approx. 1mum. Then, inert gases 91, 92 and 93 are transported to a transport tube 12, and fine particles of the material solution are supplied via transporting gas 11 on a substrate. A CuInSe2 thin film is obtained on the substrate under these conditions. The solutions 51, 52 and 53 are so supplied from auxiliary containers 71, 72 and 73 that the liquid level becomes a predetermined level. Then, the crystallinity of the film is improved and the film is densified to form the CuInSe2 thin film of high quality at low cost. |
