| 摘要 |
<p>A semiconductor laser of a refractive index-guided type comprises a GaAs (100) substrate (46) having a mesa of (011) orientation thereon, a buffer layer (49) grown on the top surface and side walls of the mesa of the GaAs (100) substrate and having a mesa on the top surface, a first cladding layer (42) grown on the buffer layer in compliance with the outline on the top surface of the buffer layer having the mesa so that a mesa is provided, an active layer (41) grown on the first cladding layer and interrupted on the side walls of the mesa of the first cladding layer (42), and a second cladding layer (43) grown on the active layer (41), a boundary surface of the second cladding layer being in contact through the interrupted portion of the active layer with a boundary surface of the first cladding layer (42). The first and second cladding layer (42, 43) are of AlGaInP or AlInP, and of a forbidden energy bandgap larger than that of the active layer (41). The semiconductor laser as described above is fabricated by a single etching process and a single and common metalorganic vapour phase epitaxy.</p> |
