Superluminescent diode and single mode laser.

摘要

A buried heterostructure semiconductor device has an elongated layer (G) of gain medium surrounded by a lower index of refraction medium (19) for guiding light along the length of the gain medium. A window (W) and an antireflective layer (AR) are deposited on the output end (12) of the gain layer (G) to minimize reflections. A portion of the gain medium nearer the output end of the device is electrically pumped, leaving an unpumped portion (A) of the gain medium remote from the output end. The unpumped portion of the gain medium absorbs light travelling along the length of the gain medium. This inhibits reflection from the end of the gain medium remote from the output end. When the device is pumped with a moderate power level, strong superluminescent output is obtained. When the device is pumped well above the lasing threshold by reason of "burning through" the unpumped absorbing portion of the gain medium, a single mode laser is obtained with side band power at least 20 db below the power of the principal oscillation mode. "Burning through" the unpumped absorbing portion can be inhibited by extracting current carriers from that portion of the medium.