| 摘要 |
<p>A process for making an inverted silicon-on-insulator semiconductor device having a pedestal structure. After the processing of polysilicon layers (14, 18), dielectric layers (12, 16, 20, 26), an epitaxial region (24) and a nitride layer (28), a second substrate (30) is bonded to the nitride layer (28) and the first substrate (10) is removed. This allows for an epitaxial region (24) which is isolated from the substrate (30).</p> |
