| 摘要 |
PURPOSE:To enhance practicability and reliability of lithography by using polymer of polymethacrylate or polystyrene or one of their derivatives having at least one phenyl group for a resist. CONSTITUTION:The resist of polyphenyl methacrylate 3 is applied to a P- containing silicon oxide film 1 attached to the whole surface of a semiconductor substance 2, and exposed to x-rays 10 through an X-ray mask 4 formed into a prescribed circuit pattern 7. The substrate 2 is shifted to a reaction chamber evacuated to <=1 Pa, and allowed to react with the vapor of acrylic acid monomer 6 introduced into the chamber to form a graft polymer 5. Then, the negative resist pattern 5' is obtained by dipping the substrate 2 into a developing solution, such as methyl cellosolve acetate, and drying it. The intended pattern is obtained by dry etching the underlying silicon oxide film 1 through the resist pattern 5' as a mask to remove the pattern 5', thus permitting practicability and reliability of the lithography to be enhanced. |
