| 摘要 |
PURPOSE:To prevent the contact between a specimen, a developer and an etchant from being obstructed by any produced fine bubbles melted into the etchant due to pressurization by a method wherein developement or wetetching process is performed at applicable inner atmospheric pressure exceeding the external atmospheric pressure. CONSTITUTION:A stainless steel made outer box 3 enclosing a container 2 containing wet etchant 1 is prepared. High pressure N24 can be externally led into the stainless steel made outer box 3 enabling the atmospheric pressure inside the outer box 3 to be set up exceeding the external atmospheric pressure. Patterns 8 are formed by coating an SiO2 film 6 on an Si substrate 5 with positive type electron beam resist 7 as well as electron beam exposure and development. Then, the SiO2 film 6 is wetetched by leading in high pressure N2 at specified atmospheric pressure. Through these procedures, the wet etchant 1 can evenly infiltrate into the resist patterns 8 enabling the even etching patterns to be formed. |
