Thin film silicon semiconductor device and process for producing thereof.

摘要

A thin film silicon semiconductor device provided on a substrate (12) according to the present invention comprises a thin polycrystalline silicon film (14) having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm<2>/V.s or higher.