发明名称 HALL EFFECT INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To provide a Hall sensor which operates with a single power supply and has a large output amplitude by integrating a Hall element which composes a Hall sensor circuit, and the amplifying circuit and the output circuit of Hall element output voltage on the same GaAs substrate. CONSTITUTION:Hall effect integrated circuit consists of a Hall element HD, a differential amplifying circuit AMP which amplifies its Hall element output voltage, a Schmitt trigger circuit which shapes the waveform of the apmlified signal and an output circuit OP. These circuits are formed on the same GaAs substrate. The output circuit OP consists of a circuit which is composed of a load resistance Ro and driving FET Qo which are series connected between the power supply voltage VDD and the grounding point GND. Each transistor which composes the differential amplifying circuit AMP, Schmitt trigger circuit ST and output circuit OP is composed of normally off type pn junction FET (the so-called enhancement type) which becomes 'off' in a state that signal is not applied to a gate.
申请公布号 JPS6431482(A) 申请公布日期 1989.02.01
申请号 JP19870187920 申请日期 1987.07.28
申请人 NIPPON MINING CO LTD 发明人 TAIHICHI MASAAKI;OMORI MASAMICHI;TAKAHASHI KENJI;TOME TAKESHI
分类号 H01L43/06;H01L27/22 主分类号 H01L43/06
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