| 摘要 |
PURPOSE:To reduce an ON resistance between a source and a drain per unit area by forming a source region and a base region on a recessed semiconductor surface, and shortening an interval between the adjacent base regions. CONSTITUTION:A recess of several micron per ten to 2 microns is formed on the surface of an N-type silicon semiconductor substrate 1, a P-type well region 2 formed in the recess, a P-type base region 3 of approx. 3 microns of junction depth from a semiconductor surface formed by the same diffusing mask as that of the well region 2, and an N-type source region 4 having 1 micron or less of depth from the semiconductor surface in the base region are provided, and a polycrystalline silicon 6 of a gate electrode covers between adjacent source regions 4 through a gate oxide film 5. The silicon 6 is covered with an insulating film 7, and aluminum as a source electrode 8 is extended in contact with the regions 4, 3 and 2. |
