发明名称 METHOD FOR FORMING PATTERN HAVING TWO LAYER STRUCTURE
摘要 PURPOSE:To reduce the swelling property and to improve the resolution of the pattern in a developing and a washing steps by using a specified silicone modified polyvinyl alcohol for the upper layer of a resist having a two layer structure for a pattern formation. CONSTITUTION:The silicone modified polyvinyl alcohol shown by the formula is used for the upper layer having the two layer structure for the pattern formation. In the formula, R1 is alkylene group, R2-R4 are each alkyl group, (m) is an integer of 500-2,000, (n) is an integer of 1-20. For example, the resist having the two layer structure is formed by applying a phenol-novolak type resin on a silicone substrate forming a circuit wiring to form a smoothened layer of the resist having the two layer structure, and then, by applying a resist solution obtd. by filtering a cyclohexanone solution contg. 13wt.% the silicone modified polyvinyl alcohol, on said smoothened layer, followed by baking it. Thus, the upper layer of the resist having the two layer structure which has the excellent sensitivity, resolution and anti-oxygen plasma property can be obtd.
申请公布号 JPS6429832(A) 申请公布日期 1989.01.31
申请号 JP19870184676 申请日期 1987.07.25
申请人 FUJITSU LTD 发明人 SAITO KAZUMASA;FUKUYAMA SHUNICHI;SHIBA SHOJI;KAWASAKI YOKO;WATABE KEIJI
分类号 H01L21/027;C03C4/08;C03C23/00;G03F7/038;G03F7/075;G03F7/095 主分类号 H01L21/027
代理机构 代理人
主权项
地址