发明名称 |
Process for manufacturing a power semiconductor component |
摘要 |
A process for manufacturing a power semiconductor component having a component of this type is presented which has at least three consecutive layers and possessing a high current capacity and small power losses. For contacting the first two layers, the component has first second metallized contact planes, which impress a step-like structure onto a first surface of the component. The steps have a height of between 10 and 20 mu m and a width of between 20 and 300 mu m. The ratio between the surface area of the first contact plane and the surface area of the second contact plane is between 1 and 4. The first layer is heavily doped and has a maximum thickness of 8 mu m, and the second layer is lightly doped and has a maximum thickness of 40 mu m. According to the process for manufacturing the component, the surface structure according to the invention is produced essentially by a reactive ion-etching process with a single aluminum mask.
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申请公布号 |
US4801554(A) |
申请公布日期 |
1989.01.31 |
申请号 |
US19860833219 |
申请日期 |
1986.02.26 |
申请人 |
BBC BROWN, BOVERI & COMPANY, LIMITED |
发明人 |
GOBRECHT, JENS;ROGGWILLER, PETER;SITTIG, ROLAND;VOBORIL, JAN |
分类号 |
H01L29/739;H01L29/744;(IPC1-7):H01L21/308 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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