Method for forming thin film multi-layer structure member

摘要

A method for forming a thin multi-layer structure member having at least one of at least one kind of a semiconductor thin film controlled in valence electron and a semiconductor thin film regulated in band gap comprises forming at least one layer of said semiconductor thin films on a substrate by introducing a precursor (B) formed in a decomposition space (B) which becomes the starting material for deposited film formation and an active species (C) formed in a decomposition space (C) which interacts with said precursor (B) separately into a deposition space (A) for forming a thin film to thereby effect chemical reaction through the interaction between said precursor (B) and said active species (C), and forming at least one layer of other thin films by introducing a gaseous starting material (a) for thin film formation and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material (a) into a reaction space to effect contact therebetween to thereby form chemically a plural number of precursors including precursors under excited state and using at least one precursor of the precursors as the feeding source for the constituent element of the deposited film.