| 摘要 |
PURPOSE:To make it possible to form easily a FET wherein the arrangement of a gate electrode is asymmetric, by forming an asymmetric insulating film on the side part of the gate electrode, and implanting ions into an active layer in a substrate by applying the insulating film and the gate electrode to a mask. CONSTITUTION:After an active layer 2 is formed in a semiconductor substrate 1, a gate electrode 3 is formed on the surface of the layer. An insulating film 4 and an Al metal layer 5 are formed on the substrate 1 and the gate electrode 3. The metal layer 5 is obliquely etched by utilizing a protrusion of the gate electrode, and a metal layer 5' is left only on the sidewall part of the above protrusion. The insulating film 4 is etched by applying the left metal layer 5' to a mask, and the asymmetric sidewalls 6A, 6B are formed on the side part of the gate 3. Ion is implanted by applying the sidewalls and the gate electrode to a mask, and ohmic layers 7s, 7d are formed, on the surface of which ohmic electrodes 8N, 9 for the source and drain are formed. |
