| 摘要 |
PURPOSE:To reduce a stepped difference of an opening part at a forming region of electrode wiring, by piling a polycrystalline silicon layer on the opening part formed in an insulation film on a silicon substrate and next by forming an insular oxide film at least inside the opening part and afterwards by removing this oxide film and forming an electrode wiring on a region where the oxide film is removed. CONSTITUTION:An N<+> type burial layer 12 is formed on a P type silicon substrate 11 by means of diffusion of arsenic ions or the like, and next an N type epitaxial layer 13 is formed on the layer 12 and oxidized to form an oxide film 14. After photolithography is then used to form an opening part 10 in the oxide film 14, a polycrystalline silicon film 18 is made to grow on the whole surface. This polycrystalline silicon film 18 is provided with selective oxidation, and an insular oxide film 17A and an oxide film 17B are formed inside and outside the opening part 10 respectively. The insular oxide film 17a is etched/removed to expose a surface of the N type epitaxial layer 13. Metals such as platinum, aluminium, and the like are stuck on the surface and provided with heat treatment, so that an electrode wiring 20 is formed by patterning. Since a stepped difference of the opening part 10 is thus made smooth, no disconnection occurs in the electrode wiring 10. |
