| 摘要 |
<p>PURPOSE:To decreases the masks to be used and to simplify stages by laminating a transparent conductive film as a drain electrode line and the laminated films consisting of a 1st metallic film, semiconductor film, insulating film and 2nd metallic film having an island shape on the transparent conductive film. CONSTITUTION:The drain electrode line 17, a display electrode 15 and a source electrode drawn out of the electrode 15 are formed of ITO which is the transparent conductive film on an insulating substrate 11. A gate line 22 is formed to intersect with the drain line 17 and the source electrode. This gate line is made into the three-layered structure consisting successively of I-type amorphous silicon, silicon nitride and aluminum. The island 21 consisting of the laminated films of chromium, N-type amorphous silicon, I-type amorphous silicon, silicon nitride, and aluminum is formed on the drain line 17. The unnecessary parts of the high-concn. doped N-type semiconductor for ohmic formation are also etched, but the metal on the display electrode is exposed and, therefore, this metal is etched. Two sheets of the masks to be used is thereby necessitated and the wiring resistance of the drain electrode is decreased by about one digit.</p> |
